• DocumentCode
    1578198
  • Title

    Photoluminescence of ZnO thin films on Si substrate

  • Author

    Bartkiewicz, K. ; Lukasiak, Z. ; Zawadzka, A. ; Plóciennik, P. ; Korcala, A.

  • Author_Institution
    Fac. of Phys., Astron., & Inf., Nicolaus Copernicus Univ., Torun, Poland
  • fYear
    2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper photoluminescence (PL) properties of ZnO (zinc oxide) thin films on Si substrates are presented. Samples were prepared by sol-gel method. Photoluminescence experiments where carried out at different temperatures (10 K- 300 K). Registered spectra exhibit multiband structure witch depends on the temperature and preparation conditions.
  • Keywords
    II-VI semiconductors; photoluminescence; sol-gel processing; zinc compounds; ZnO; multiband structure; photoluminescence; sol-gel method; temperature 10 K to 300 K; Chemical lasers; Laser excitation; Laser tuning; Nitrogen; Optical pulses; Photoluminescence; Semiconductor thin films; Substrates; Temperature dependence; Zinc oxide; emission; photoluminescence; sol-gel; temperature dependence; thin film; zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Transparent Optical Networks (ICTON), 2010 12th International Conference on
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4244-7799-9
  • Electronic_ISBN
    978-1-4244-7797-5
  • Type

    conf

  • DOI
    10.1109/ICTON.2010.5548975
  • Filename
    5548975
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1578198