Title :
Over-clocked SSD: Safely running beyond flash memory chip I/O clock specs
Author :
Kai Zhao ; Venkataraman, Kalyana Sundaram ; Xuebin Zhang ; Jiangpeng Li ; Ning Zheng ; Tong Zhang
Author_Institution :
ECSE Dept., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
This paper presents a design strategy that enables aggressive use of flash memory chip I/O link over-clocking in solid-state drives (SSDs) without sacrificing storage reliability. The gradual wear-out and process variation of NAND flash memory makes the worst-case oriented error correction code (ECC) in SSDs largely under-utilized most of the time. This work proposes to opportunistically leverage under-utilized error correction strength to allow error-prone flash memory I/O link over-clocking. Its rationale and key design issues are presented and studied in this paper, and its potential effectiveness has been verified through hardware experiments and system simulations. Using sub-22nm NAND flash memory chips with I/O specs of 166MBps, we carried out extensive experiments and show that the proposed design strategy can enable SSDs safely operate with error-prone I/O link running at 275MBps. Trace-driven SSD simulations over a variety of workload traces show the system read response time can be reduced by over 20%.
Keywords :
disc drives; error correction; flash memories; ECC; NAND flash memory chips; SSDs; byte rate 166 MByte/s; byte rate 275 MByte/s; design strategy; error correction strength; flash memory chip I/O clock specs; flash memory chip I/O link over-clocking; gradual wear-out; over-clocked SSD; solid-state drives; workload traces; worst-case oriented error correction code; Abstracts; Bit error rate; Clocks; Flash memories; Hardware; Lead; Reliability;
Conference_Titel :
High Performance Computer Architecture (HPCA), 2014 IEEE 20th International Symposium on
Conference_Location :
Orlando, FL
DOI :
10.1109/HPCA.2014.6835962