Title :
Effective third-order optical nonlinearity of nano-porous silicon
Author :
Bazaru, Tatiana ; Vlad, Valentin I. ; Petris, Adrian ; Miu, Mihaela
Author_Institution :
Dept. of Lasers, Nat. Inst. of Laser, Bucharest, Romania
Abstract :
We study the effective optical linear refractive index and the effective optical third-order nonlinear susceptibility of nano-porous silicon layers on crystalline silicon substrate, in function of fill fraction and light wavelength. Starting from Bruggeman´s effective medium theory and Sellmeier´s dispersion formalism (for silicon), we derive simplified approximative formulae that describe the dependences of effective optical linear and third-order nonlinear properties on both fill fraction and wavelength, in the spectral range covering visible and near-infrared. The experimental data obtained from reflectivity measurement (in the case of effective linear refractive index) and by reflection intensity scan (in the case of effective third-order nonlinearity) are in good agreement with the data predicted by our approximative formulae and with the results of Bruggeman´s effective medium theory, for nano-porous silicon.
Keywords :
elemental semiconductors; nanoporous materials; nonlinear optical susceptibility; optical dispersion; refractive index; silicon; Si; crystalline silicon substrate; fill fraction; light wavelength; nanoporous silicon; optical linear refractive index; optical third-order nonlinear susceptibility; reflectivity measurement; third-order optical nonlinearity; Crystallization; Dispersion; Nonlinear optics; Optical reflection; Optical refraction; Optical variables control; Reflectivity; Refractive index; Silicon; Wavelength measurement; dispersion; effective linear refractive index; effective nonlinear susceptibility; porous silicon; reflection intensity scan;
Conference_Titel :
Transparent Optical Networks (ICTON), 2010 12th International Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-7799-9
Electronic_ISBN :
978-1-4244-7797-5
DOI :
10.1109/ICTON.2010.5548980