Title :
Two-phase boosted voltage generator [CMOS DRAMs]
Author :
Kim, Y.H. ; Nam, J.K. ; Sohn, Y.S. ; Heo, S.C. ; Lee, S.H. ; Park, H.-J. ; Han, Y.S. ; Doh, J.I. ; Choi, Y.J. ; Choi, J.H. ; Choi, J.S. ; Park, C.S.
Author_Institution :
Dept. of Electr. Eng., POSTECH, Pohang, South Korea
fDate :
6/21/1905 12:00:00 AM
Abstract :
A two-phase boosted voltage (VPP) generator circuit was proposed for use in giga-bit DRAMs. It reduced the maximum gate oxide voltage of pass transistor and the lower limit of supply voltage to VPP and VTN respectively while those for the conventional charge pump circuit are VPP+VDD and 1.5 VTN respectively. Also the pumping current was increased in the new circuit
Keywords :
CMOS memory circuits; DRAM chips; circuit simulation; power supply circuits; charge pump circuit; giga-bit DRAMs; maximum gate oxide voltage; pass transistor; pumping current; supply voltage; two-phase boosted voltage generator; Charge pumps; Circuit simulation; Electronics industry; MOS devices; MOSFETs; Pulse circuits; Pulse generation; Ring oscillators; SPICE; Threshold voltage;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.821007
