• DocumentCode
    1578442
  • Title

    Two-phase boosted voltage generator [CMOS DRAMs]

  • Author

    Kim, Y.H. ; Nam, J.K. ; Sohn, Y.S. ; Heo, S.C. ; Lee, S.H. ; Park, H.-J. ; Han, Y.S. ; Doh, J.I. ; Choi, Y.J. ; Choi, J.H. ; Choi, J.S. ; Park, C.S.

  • Author_Institution
    Dept. of Electr. Eng., POSTECH, Pohang, South Korea
  • fYear
    1999
  • fDate
    6/21/1905 12:00:00 AM
  • Firstpage
    586
  • Lastpage
    589
  • Abstract
    A two-phase boosted voltage (VPP) generator circuit was proposed for use in giga-bit DRAMs. It reduced the maximum gate oxide voltage of pass transistor and the lower limit of supply voltage to VPP and VTN respectively while those for the conventional charge pump circuit are VPP+VDD and 1.5 VTN respectively. Also the pumping current was increased in the new circuit
  • Keywords
    CMOS memory circuits; DRAM chips; circuit simulation; power supply circuits; charge pump circuit; giga-bit DRAMs; maximum gate oxide voltage; pass transistor; pumping current; supply voltage; two-phase boosted voltage generator; Charge pumps; Circuit simulation; Electronics industry; MOS devices; MOSFETs; Pulse circuits; Pulse generation; Ring oscillators; SPICE; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI and CAD, 1999. ICVC '99. 6th International Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    0-7803-5727-2
  • Type

    conf

  • DOI
    10.1109/ICVC.1999.821007
  • Filename
    821007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1578442