Title :
Magnetic interaction in two-dimensional AlMnAs/GaAs magnetic semiconductor heterostructures
Author :
Zhiyu Liu ; De Boeck, Jo ; Borghs, G. ; Moshchalkov, Victor V.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Summary form only given. The incorporation of magnetic semiconductors in two-dimensional heterostructures enables to reveal the interaction mechanism between the magnetic impurities and the electronic carriers as well as offering an option to intriguing device applications in the spintronics area. We fabricated GaAs/AlAs heterostructures in which a two-dimensional hole gas (2DHG) is formed on the GaAs-side of the interface. In these heterostructures Mn-impurities were incorporated to realize samples with the following structures: GaAs//spl delta/-layer Mn (4.5% ML equivalent)/Al/sub 097/Mn/sub 003/As.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; interface magnetism; interface states; magnetic impurities; manganese compounds; semiconductor heterojunctions; semimagnetic semiconductors; two-dimensional electron gas; 2DHG; AlMnAs-GaAs; GaAs//spl delta/-layer Mn/Al/sub 097/Mn/sub 003/As; GaAs/AlAs heterostructures; Mn impurities; electrical transport; electronic carriers; interaction mechanism; magnetic impurities; magnetic interaction; magnetic semiconductors; spintronics; two-dimensional AlMnAs/GaAs magnetic semiconductor heterostructures; two-dimensional heterostructures; two-dimensional hole gas; Gallium arsenide; Impurities; Magnetic anisotropy; Magnetic devices; Magnetic properties; Magnetic semiconductors; Magnetic separation; Perpendicular magnetic anisotropy; Scattering; Temperature;
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1001525
