• DocumentCode
    1578502
  • Title

    Implant enhanced dual intracavity polarization switching asymmetric current injected VCSEL

  • Author

    Zheng, Yan ; Lin, Chin-Han ; Coldren, Larry A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
  • fYear
    2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Output polarization is controlled by injecting current along crystalline directions. VCSELs with record-low threshold current of 0.19 mA and extinction ratio >;21dB from fit is achieved. Polarization switching is shown to be enhanced by implantation.
  • Keywords
    polarisation; surface emitting lasers; switching; asymmetric current injected VCSEL; current 0.19 mA; implant enhanced dual intracavity; polarization switching; vertical cavity surface emitting laser; Gallium arsenide; Implants; Optical switches; Power generation; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2011 and the National Fiber Optic Engineers Conference
  • Conference_Location
    Los Angeles, CA
  • ISSN
    pending
  • Print_ISBN
    978-1-4577-0213-6
  • Type

    conf

  • Filename
    5875095
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1578502