Comparative analysis of 3D Flexure Gate FET with different metal and gate structure

This paper deals with the design and simulation of Flexure Gate Field Effect Transistor (Flexure-FET) and the comparative analysis of the different structures of gate using gold (Au) and poly-silicon. This paper presents the investigation of pull-in voltage of the gate and the change in capacitance in between the gate and the channel due to the actuation. The effect of gate displacement is reflected in the drain current characteristics of FET and the ratio of ON / OFF current is investigated for higher sensitivity. The simulation has been carried out for fixed-fixed suspended gate with uniform meander, non-uniform meander, meander at four corner and without meander configurations and also the von Mises stress analysis for each structure is demonstrated in this paper.