In-line electrical characterization of ultrathin gate dielectric films

Author

Cubaynes, Florence ; Passefort, Sophie ; Eason, Kwame ; Zhang, Xiafang ; Date, Lucien ; Pique, Didier ; Conard, Thierry ; Rothschild, Aude ; Schaekers, Marc

Author_Institution

Philips Res., Leuven, Belgium

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

1

Lastpage

5

Abstract

In this paper, in-line measurements of ultrathin gate dielectrics are reported. Various plasma nitrided oxides down to 1.5 nm EOT have been studied using in-line optical and non-contact electrical measurement techniques. The good correlation obtained with physical analysis and "classic" capacitance-voltage measurements shows the suitability of in-line measurement techniques for a first qualitative evaluation of ultrathin dielectric films.

Keywords

dielectric measurement; dielectric thin films; nitridation; plasma materials processing; silicon compounds; 1.5 nm; SiO₂; capacitance-voltage measurement; electrical measurement; equivalent oxide thickness; in-line measurement; noncontact measurement; optical measurement; plasma nitrided oxide; ultrathin gate dielectric film; Capacitance; Capacitance-voltage characteristics; Dielectric films; Dielectric measurements; Optical films; Oxidation; Performance evaluation; Plasma measurements; Silicon; Vibration measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop

Print_ISBN

0-7803-7158-5

Type

conf

DOI

10.1109/ASMC.2002.1001563

Filename

1001563