DocumentCode :
1578873
Title :
Flexible polishing surface (FPS) vs rigid polishing surface (RPS) in CMP: pros and cons
Author :
Gotkis, Yehiel ; Wei, David ; Kistler, Rodney
Author_Institution :
CMP/CLN Div., Lam Res. Corp., Fremont, CA, USA
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
27
Lastpage :
32
Abstract :
Two major conceptual CMP approaches, namely flexible polishing surface (utilized in linear belt CMP) and rigid polishing surface (hard platen rotary and orbital CMP) concepts are compared with regard to process stability, uniformity, planarization efficiency and other performance features. A new CMP characteristic, Normalized Removal Work, the amount of wafer layer material removed by a unit of active pad area (NRW=(Thickness removed)/(Active pad area), [A/sq. inch]), is used to analyze and compare the concepts. The NRW shows how much of the removed material is transferred and redeposited over a unit of pad area. It influences all aspects of the CMP process. Low NRW is good for CMP, high NRW is bad for CMP.
Keywords :
chemical mechanical polishing; chemical-mechanical planarization; flexible polishing surface; hard platen rotary CMP; linear belt CMP; normalized removal work; orbital CMP; planarization efficiency; process stability; rigid polishing surface; uniformity; Belts; Degradation; Integrated circuit manufacture; Manufacturing; Planarization; Shape; Signal resolution; Slurries; Stability; Surface topography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop
Print_ISBN :
0-7803-7158-5
Type :
conf
DOI :
10.1109/ASMC.2002.1001568
Filename :
1001568
Link To Document :
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