Title :
Behavioral Modeling of GaN FETs: A Load-Line Approach
Author :
Raffo, Antonio ; Bosi, Gianni ; Vadala, Valeria ; Vannini, Giorgio
Author_Institution :
Dept. of Eng., Univ. of Ferrara, Ferrara, Italy
Abstract :
In this paper, a new model formulation is presented that correctly accounts for low-frequency dispersion (i.e., trapping and thermal phenomena) affecting field-effect transistors (FETs). In particular, for the first time a behavioral description is applied only to the intrinsic current generator, enabling the correct measurement-based evaluation of the intrinsic device operation. The model, which is by construction technology independent, has been extensively validated considering a GaN FET. This choice is justified by the large interest around this technology and by the presence of dispersion effects that must be accurately accounted for.
Keywords :
III-V semiconductors; field effect transistors; gallium compounds; semiconductor device models; wide band gap semiconductors; GaN; GaN FET; behavioral modeling; field-effect transistors; intrinsic current generator; intrinsic device operation; load-line approach; low-frequency dispersion; thermal phenomena; trapping phenomena; Charge carrier processes; Gallium nitride; Harmonic analysis; Load modeling; Mathematical model; Solid modeling; Transistors; Field-effect transistors (FETs); GaN transistors; microwave amplifiers; nonlinear circuits; nonlinear distortion; semiconductor device modeling;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2013.2291710
