• DocumentCode
    1578967
  • Title

    Dynamic Soft Error Hardening via Joint Body Biasing and Dynamic Voltage Scaling

  • Author

    Firouzi, A. ; Yazdanbakhsh, A. ; Dorosti, H. ; Fakhraie, S.M.

  • Author_Institution
    Nano Electron. Center of Excellence, Univ. of Tehran, Tehran, Iran
  • fYear
    2011
  • Firstpage
    385
  • Lastpage
    392
  • Abstract
    Shrinking feature sizes, reduced voltages, and higher transistor count of nano-scale silicon chips challenge designers in terms of performance, power consumption, and reliability. This paper investigates the effect of simultaneous use of dynamic voltage and frequency scaling (DVFS) and body biasing (BB) on power consumption, reliability, and performance. An analytical model of reliability as a function of body bias voltage, supply voltage, and frequency is proposed. We derive a three dimensional optimization problem by exploiting proposed reliability model in conjunction with power consumption and performance model. The resulting problem is solved using widely-used geometric optimization to identify optimal supply voltage and body bias voltage and then is validated using accurate simulation. Afterwards, it is demonstrated how joint energy-performance-reliability space optimization method can be used in an adaptive reliability-aware power management systems. Finally, we show that combined soft error aware BB and DVFS is capable of improving power consumption about 30% in comparison to reliability-aware DVFS only for the same level of reliability and performance constraints.
  • Keywords
    circuit optimisation; integrated circuit modelling; integrated circuit reliability; nanoelectronics; power consumption; radiation hardening (electronics); adaptive reliability-aware power management systems; body bias voltage; dynamic soft error hardening; dynamic voltage scaling; feature sizes; frequency scaling; geometric optimization; joint body biasing; joint energy-performance-reliability space optimization method; nanoscale silicon chips; optimal supply voltage; power consumption; reliability model; reliability-aware DVFS; soft error aware BB; three dimensional optimization problem; transistor count; Digital systems; DVFS; Reliability; Soft error; body biasing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Digital System Design (DSD), 2011 14th Euromicro Conference on
  • Conference_Location
    Oulu
  • Print_ISBN
    978-1-4577-1048-3
  • Type

    conf

  • DOI
    10.1109/DSD.2011.53
  • Filename
    6037436