Title :
BF2+ implant: a fluorine bubble induced ET failure
Author :
Viera, Chris J. ; Gurcan, Burcay ; Crocker, Kendra A. ; Todd, Perrin A. ; Lewis, Kenneth M.
Author_Institution :
Nat. Semicond. Corp., South Portland, ME, USA
fDate :
6/24/1905 12:00:00 AM
Abstract :
Fluorine bubbles are a known result of BF2+ high energy implants. This work presents a failure mechanism induced by gross fluorine bubbles, that allows poly silicon to be damaged during its subsequent cobalt silicide etch. An alternative implant that includes both BF2+ and B11 may alleviate the effects of F precipitates without eliminating the benefits of BF2+ self-amorphizing the substrate.
Keywords :
amorphisation; boron compounds; bubbles; elemental semiconductors; etching; failure analysis; ion implantation; precipitation; silicon; BF2+ ion implantation; CoSi2; ET failure; Si:BF2; cobalt silicide etching; fluorine bubble; polysilicon substrate; precipitation; self-amorphization; Annealing; Boron; Etching; Failure analysis; Implants; Plasma temperature; Silicides; Silicon; Substrates; Testing;
Conference_Titel :
Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop
Print_ISBN :
0-7803-7158-5
DOI :
10.1109/ASMC.2002.1001588
