DocumentCode :
1579349
Title :
High-speed SiGe HBT track-and-hold
Author :
Hoskins, Michael J. ; Williams, Diane R.
Author_Institution :
Q-DOT Inc., Colorado Springs, CO, USA
Volume :
2
fYear :
2003
Firstpage :
1448
Abstract :
A wideband track-and-hold (T/H) circuit is developed based on the IBM 7HP SiGe technology with ft ∼ 120 GHz. A switched-emitter-follower design incorporates features necessary to realize multi-GHz bandwidth and an improved design trade among bandwidth, linearity, and hold-mode feedthrough. Simulations incorporating layout parasitics show the core T/H circuit has a bandwidth of ∼ 4 GHz and an extremely wide sampling aperture bandwidth well beyond 10 GHz. The simulations indicate the T/H has roughly 9-10 - bit performance for linearity and feedthrough level at a signal frequency of 4 GHz. Initial experimental results for the track mode response are also presented. The T/H shows promise for high-speed analog-to-digital conversion and subsampling applications.
Keywords :
analogue-digital conversion; germanium compounds; heterojunction bipolar transistors; signal sampling; silicon compounds; 10E9 Hz; 120 GHz; 4E9 Hz; HBT track-and-hold; SiGe; analog-to-digital conversion; hold-mode feedthrough; multiGHz bandwidth; subsampling applications; switched-emitter-follower design; track mode response; wide sampling aperture; Apertures; Bandwidth; Circuit simulation; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Sampling methods; Silicon germanium; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Instrumentation and Measurement Technology Conference, 2003. IMTC '03. Proceedings of the 20th IEEE
ISSN :
1091-5281
Print_ISBN :
0-7803-7705-2
Type :
conf
DOI :
10.1109/IMTC.2003.1207990
Filename :
1207990
Link To Document :
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