Investigating the Statistics of the Random Gain in Avalanche Photodiodes Using a Soft Dead Space Model

Author

Jahanmirinejad, Saeedeh ; Sheikhi, Mohammad Hossein

Author_Institution

Dept. of Electr. Eng., Shiraz Univ., Shiraz

fYear

2008

Firstpage

1

Lastpage

5

Abstract

A modified model for calculating mean gain and excess noise factor of p⁺-i-n⁺ avalanche photodiodes (APD´s) is presented. The proposed model accounts for the effect of dead space by considering a soft ionization rate of enabled carriers. The application of the soft dead space model is intended to be mainly beneficial in the analysis of thin APD´s. Based on the proposed model, renewal arguments governing multiplication gain and noise of APD´s have been modified and solved using numerical methods.

Keywords

avalanche photodiodes; statistics; avalanche photodiodes; multiplication gain; multiplication noise; random gain; soft dead space model; soft ionization rate; Avalanche photodiodes; Circuit noise; Impact ionization; Noise reduction; Optical fiber communication; Optical noise; Optical receivers; Space exploration; Statistics; Steady-state; avalanche photodiode (APD); dead space; excess noise factor; impact ionization; multiplication gain;

fLanguage

English

Publisher

ieee

Conference_Titel

Information and Communication Technologies: From Theory to Applications, 2008. ICTTA 2008. 3rd International Conference on

Conference_Location

Damascus

Print_ISBN

978-1-4244-1751-3

Electronic_ISBN

978-1-4244-1752-0

Type

conf

DOI

10.1109/ICTTA.2008.4530147

Filename

4530147