Title :
Negative Characteristic Temperature of Long Wavelength InAs/AlGaInAs Quantum Dot Laser Grown on InP Substrates
Author :
Alghoraibi, I. ; Rohel, T. ; Piron, R. ; Bertru, N. ; Paranthoen, C. ; Elias, G. ; Nakkar, A. ; Folliot, H. ; Corre, A. Le ; Loualiche, S.
Author_Institution :
LENS-FOTON, Rennes
Abstract :
InAs quantum dot lasers grown on (311)B InP substrates with AlGalnAs barriers have been fabricated and studied. A large decrease of the threshold current with temperature was observed from 110 to 140 K. In the same temperature range, electroluminescence spectra showed a shape change, an energy shift with temperature, which can not be fitted with a Varshni law, and a large decrease of the laser linewidth. These results can be related to a delayed thermalization of carriers within quantum dot ensemble.
Keywords :
electroluminescent devices; quantum dot lasers; InP substrates; Varshni law; electroluminescence spectra; quantum dot laser; Delay; Electroluminescence; Indium phosphide; Laser stability; Molecular beam epitaxial growth; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Substrates; Temperature distribution; AlGaInAs (Q1.2); Electroluminescence (EL); InAs Quantum dots (QDs); InP; Lightwave communication; Molecular beam epitaxy (MBE); Negative characteristic temperateure (T0); Quantum dots laser; Semiconductor laser;
Conference_Titel :
Information and Communication Technologies: From Theory to Applications, 2008. ICTTA 2008. 3rd International Conference on
Conference_Location :
Damascus
Print_ISBN :
978-1-4244-1751-3
Electronic_ISBN :
978-1-4244-1752-0
DOI :
10.1109/ICTTA.2008.4530148
