An ESD-protected, 2.45/5.25-GHz dual-band CMOS LNA with series LC loads and a 0.5-V supply

Author

Hyvonen, Sami ; Bhatia, Karan ; Rosenbaum, Elyse

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

fYear

2005

Firstpage

43

Lastpage

46

Abstract

An ESD-protected, CMOS, dual-band 2.45/5.25-GHz LNA was designed, fabricated, and characterized. Operation in two bands is enabled by a dual-band input matching network and separate series LC load resonators for each operating frequency. At 2.45 GHz, the measured voltage gain and IIP₃ are 13.9 dB and +2.9 dBm, respectively. At 5.25 GHz, the measured voltage gain and IIP₃ are 8.7 dB and +3.2 dBm, respectively. The LNA consumes 2.5 mW from a 0.5-V supply. The ESD protection level of the LNA is over 9 kV (human body model).

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; circuit resonance; electrostatic discharge; impedance matching; low-power electronics; 0.5 V; 13.9 dB; 2.45 GHz; 2.5 mW; 5.25 GHz; 8.7 dB; 9 kV; dual-band CMOS LNA; dual-band input matching network; human body model ESD protection level; series LC load resonators; Dual band; Electrostatic discharge; Gain measurement; Impedance; Linearity; MOSFETs; Radio frequency; Transconductance; Voltage measurement; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8983-2

Type

conf

DOI

10.1109/RFIC.2005.1489487

Filename

1489487