• DocumentCode
    1580047
  • Title

    Physical removal of nano-scale defects from surfaces

  • Author

    Busnaina, Ahmed A. ; Lin, Hong

  • Author_Institution
    Microcontamination Res. Lab., Northeastern Univ., Boston, MA, USA
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    272
  • Lastpage
    277
  • Abstract
    As semiconductor device feature size shrinks to 100 nm and smaller, the removal of nano-scale defects presents a tremendous challenge to the industry. There is a need to understand the particle removal mechanisms and recognize their advantages and limitations. In this paper, a particle removal model is modified to be able to consider soft particle deformation. The effect of decreasing particle size down to the nano-scale and its effect on the practical use of present techniques in the future is discussed. The way in which the megasonic-cleaning technique works to remove nano-scale particles from flat and structured surfaces is presented.
  • Keywords
    nanotechnology; particle size; semiconductor process modelling; semiconductor technology; surface treatment; ultrasonic cleaning; 100 nm; flat surfaces; megasonic-cleaning technique; nano-scale defects; particle removal mechanisms; particle removal model; particle size; physical model; physical removal; semiconductor device feature size; soft particle deformation; structured surfaces; Acoustic pulses; Acoustic waves; Cleaning; Drag; Frequency; Hydrodynamics; Nanoscale devices; Semiconductor devices; Substrates; Surface acoustic waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop
  • Print_ISBN
    0-7803-7158-5
  • Type

    conf

  • DOI
    10.1109/ASMC.2002.1001617
  • Filename
    1001617