DocumentCode
1580101
Title
Development of components and integration techniques for high-speed InP-based OEIC
Author
Willen, Bo ; Dahlstrom, Mattias ; Eriksson, Urban ; Irmscher, Stefan ; Kjebon, Olle ; Weste, Urban
Author_Institution
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
1
Lastpage
8
Abstract
Activities at the Royal Institute of Technology, Sweden, in the area of high-speed optoelectronic integrated circuits are reviewed. Obtained results for discrete devices and OEICs are presented and the direction of future work discussed
Keywords
III-V semiconductors; electro-optical modulation; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated optoelectronics; microwave photonics; photodetectors; semiconductor lasers; HBT; InP; discrete devices; high-speed InP-based OEIC; integration techniques; optoelectronic integrated circuits; Costs; Cutoff frequency; Delay effects; Integrated circuit technology; Laboratories; Optical device fabrication; Optical fiber devices; Optical fiber networks; Optical transmitters; Optoelectronic devices;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
Conference_Location
London
Print_ISBN
0-7803-5298-X
Type
conf
DOI
10.1109/EDMO.1999.821078
Filename
821078
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