Title :
Development of components and integration techniques for high-speed InP-based OEIC
Author :
Willen, Bo ; Dahlstrom, Mattias ; Eriksson, Urban ; Irmscher, Stefan ; Kjebon, Olle ; Weste, Urban
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
fDate :
6/21/1905 12:00:00 AM
Abstract :
Activities at the Royal Institute of Technology, Sweden, in the area of high-speed optoelectronic integrated circuits are reviewed. Obtained results for discrete devices and OEICs are presented and the direction of future work discussed
Keywords :
III-V semiconductors; electro-optical modulation; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated optoelectronics; microwave photonics; photodetectors; semiconductor lasers; HBT; InP; discrete devices; high-speed InP-based OEIC; integration techniques; optoelectronic integrated circuits; Costs; Cutoff frequency; Delay effects; Integrated circuit technology; Laboratories; Optical device fabrication; Optical fiber devices; Optical fiber networks; Optical transmitters; Optoelectronic devices;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-5298-X
DOI :
10.1109/EDMO.1999.821078
