Title :
Properties of RFLDMOS with low resistive substrate for handset power applications
Author :
Ko, Juhyun ; Lee, Sunhak ; Oh, Han-Soo ; Jeong, Joo-Hyun ; Baek, Donghyun ; Koh, Kyoungmin ; Han, Jeonghu ; Park, Changkun ; Hong, Songcheol ; Shon, Ilhun
Author_Institution :
Samsung Electron., Kiheung, South Korea
Abstract :
High performance lateral diffused MOSFETs on a CMOS platform have been developed for handset power applications. The LDMOS, with 0.3 μm physical gate length and 7 nm gate oxide, shows high fT and fMax values up to 32 and 26 GHz, respectively, as well as low on-resistance of 3.1 ohm-mm and high saturated current of about 450 μA/μm. The breakdown voltage is measured to be 14 V. More than 70% efficiency at 900 MHz is demonstrated in a unit power cell with a gate width of 1.92 mm.
Keywords :
microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device breakdown; 0.3 micron; 1.92 mm; 14 V; 26 GHz; 3.1 ohmmm; 32 GHz; 7 nm; 70 percent; 900 MHz; CMOS; LDMOS; RFLDMOS; breakdown voltage; gate length; gate oxide thickness; gate width; handset power MOSFET; low resistive substrate; unit power cell efficiency; CMOS technology; Isolation technology; MIM capacitors; MOSFET circuits; Power MOSFET; Power amplifiers; Power measurement; Radio frequency; Substrates; Telephone sets;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489497
