S-parameter simulation of HBTs on gallium arsenide

Author

Palankovski, V. ; Quay, R. ; Selberherr, S. ; Schultheis, R.

Author_Institution

Inst. fur Microelectron., Tech. Univ. Wien, Austria

fYear

1999

Firstpage

15

Lastpage

19

Abstract

We present two-dimensional simulations of one-finger power Heterojunction Bipolar Transistors (HBTs) on GaAs. Several important physical models are discussed. We demonstrate good agreement of simulations of four different types of devices with measured data in a wide temperature range. In addition, we were able, by accounting properly for self-heating, to simulate correctly the output device characteristics. Finally, we simulated S-parameters with our two-dimensional device simulator at 5 GHz and calculated them for the range from 0 to 20 GHz using a T-like eight element small signal equivalent circuit. A comparison of simulated and measured S-parameters is presented in the paper.

Keywords

S-parameters; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; simulation; 0 to 20 GHz; 2D device simulator; 5 GHz; GaAs; GaAs substrate; S-parameter simulation; heterojunction bipolar transistors; models; one-finger power HBT; output device characteristics; self-heating; small signal equivalent circuit; two-dimensional simulations; Circuit simulation; Composite materials; Electron mobility; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Lattices; Scattering parameters; Semiconductor materials; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on

Conference_Location

London, UK

Print_ISBN

0-7803-5298-X

Type

conf

DOI

10.1109/EDMO.1999.821087

Filename

821087