Title :
Comprehensive and easy to use SEM analysis structures for BiCMOS process development
Author :
Leibiger, Steven
Author_Institution :
Fairchild Semicond. Corp., South Portland, ME, USA
fDate :
6/24/1905 12:00:00 AM
Abstract :
A comprehensive, yet easily used, set of SEM analysis structures is presented. These are currently being used in the development of a 0.35 micron, three layer metal, BiCMOS process flow. A summary list of the structure types and arrangements, key design considerations, SEM photographic results, and recommendations for improvement are included. A key design feature, a unique device navigation system allowing quick and accurate location of any particular structure is explained. Without such a feature, analysis would be difficult due to the large number, lateral size, and similarity of the various constructions.
Keywords :
BiCMOS integrated circuits; integrated circuit testing; scanning electron microscopy; 0.35 micron; BiCMOS process development; SEM analysis; critical dimension metrology; device navigation system; test pattern; Bars; BiCMOS integrated circuits; Etching; Labeling; Modems; Monitoring; Navigation; Pattern analysis; Testing; USA Councils;
Conference_Titel :
Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop
Print_ISBN :
0-7803-7158-5
DOI :
10.1109/ASMC.2002.1001639
