Comparative analysis of sense amplifiers for memories

Author

Hemaprabha, A. ; Vivek, K.

Author_Institution

Electron. & Commun. Eng., Manakula Vinayagar Inst. of Technol., Kalitheerthalkuppam, India

fYear

2015

Firstpage

1

Lastpage

6

Abstract

Sense amplifiers play an important role in memories like Dynamic Random Access (DRAM) and Static Random Access (SRAM) for read operations. Sense amplifier is one of the peripheral circuits in memories that are placed in each column of the memory array. A sense amplifier compares the bit line voltage and its complement, and then amplifies it to rail to rail output voltages. In this project, several latch type sense amplifier have been designed and simulated using 90nm CMOS technology with a supply voltage of 1.2V. Sensing delay is one of the important factors in sense amplifier design and it will be calculated for all sense amplifiers by performing voltage scaling.

Keywords

CMOS memory circuits; DRAM chips; SRAM chips; amplifiers; CMOS technology; DRAM; SRAM; bit line voltage; dynamic random access memories; peripheral circuits in memories; sense amplifier design; sensing delay; size 90 nm; static random access memories; voltage 1.2 V; Delays; Latches; MOSFET; Sensors; Switching circuits; DRAM; SRAM; Sense Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Innovations in Information, Embedded and Communication Systems (ICIIECS), 2015 International Conference on

Conference_Location

Coimbatore

Print_ISBN

978-1-4799-6817-6

Type

conf

DOI

10.1109/ICIIECS.2015.7193158

Filename

7193158