Title :
Comparative analysis of sense amplifiers for memories
Author :
Hemaprabha, A. ; Vivek, K.
Author_Institution :
Electron. & Commun. Eng., Manakula Vinayagar Inst. of Technol., Kalitheerthalkuppam, India
Abstract :
Sense amplifiers play an important role in memories like Dynamic Random Access (DRAM) and Static Random Access (SRAM) for read operations. Sense amplifier is one of the peripheral circuits in memories that are placed in each column of the memory array. A sense amplifier compares the bit line voltage and its complement, and then amplifies it to rail to rail output voltages. In this project, several latch type sense amplifier have been designed and simulated using 90nm CMOS technology with a supply voltage of 1.2V. Sensing delay is one of the important factors in sense amplifier design and it will be calculated for all sense amplifiers by performing voltage scaling.
Keywords :
CMOS memory circuits; DRAM chips; SRAM chips; amplifiers; CMOS technology; DRAM; SRAM; bit line voltage; dynamic random access memories; peripheral circuits in memories; sense amplifier design; sensing delay; size 90 nm; static random access memories; voltage 1.2 V; Delays; Latches; MOSFET; Sensors; Switching circuits; DRAM; SRAM; Sense Amplifier;
Conference_Titel :
Innovations in Information, Embedded and Communication Systems (ICIIECS), 2015 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4799-6817-6
DOI :
10.1109/ICIIECS.2015.7193158
