Title :
Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 µm to 1.8 µm region
Author :
Bente, Erwin ; Tahvili, Saeed ; Tilma, Bauke ; Kotani, Junji ; Smit, Meint ; Nötzel, Richard
Author_Institution :
Cobra Res. Inst., Eindhoven, Netherlands
Abstract :
In this paper we report on monolithic laser devices that use InAs/InP (100) quantum dot gain material for optical amplifiers. The gain material has specific properties that can be exploited. It can provide a wide gain bandwidth around a wavelength that can be tuned with current density. In passive and hybrid modelocked lasers characteristic laser dynamics are observed. Such lasers can produced extremely chirped output as well as synchronised pulsed output on multiple wavelengths. Examples of such devices are presented and possible applications in pulsed and tunable lasers are discussed.
Keywords :
III-V semiconductors; indium compounds; laser mode locking; quantum dot lasers; InAs-InP; current density; hybrid modelocked lasers; monolithic laser devices; optical amplifiers; passive modelocked lasers; pulsed lasers; quantum dot lasers; tunable lasers; wavelength 1.5 mum to 1.8 mum; Indium phosphide; Laser modes; Laser tuning; Optical materials; Optical pulses; Pulse amplifiers; Quantum dot lasers; Quantum well lasers; Stimulated emission; Tunable circuits and devices; III-V semiconductors; modelocking; optical gain measurement; quantum dot laser;
Conference_Titel :
Transparent Optical Networks (ICTON), 2010 12th International Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-7799-9
Electronic_ISBN :
978-1-4244-7797-5
DOI :
10.1109/ICTON.2010.5549095
