Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 µm to 1.8 µm region

Author

Bente, Erwin ; Tahvili, Saeed ; Tilma, Bauke ; Kotani, Junji ; Smit, Meint ; Nötzel, Richard

Author_Institution

Cobra Res. Inst., Eindhoven, Netherlands

fYear

2010

Firstpage

1

Lastpage

4

Abstract

In this paper we report on monolithic laser devices that use InAs/InP (100) quantum dot gain material for optical amplifiers. The gain material has specific properties that can be exploited. It can provide a wide gain bandwidth around a wavelength that can be tuned with current density. In passive and hybrid modelocked lasers characteristic laser dynamics are observed. Such lasers can produced extremely chirped output as well as synchronised pulsed output on multiple wavelengths. Examples of such devices are presented and possible applications in pulsed and tunable lasers are discussed.

Keywords

III-V semiconductors; indium compounds; laser mode locking; quantum dot lasers; InAs-InP; current density; hybrid modelocked lasers; monolithic laser devices; optical amplifiers; passive modelocked lasers; pulsed lasers; quantum dot lasers; tunable lasers; wavelength 1.5 mum to 1.8 mum; Indium phosphide; Laser modes; Laser tuning; Optical materials; Optical pulses; Pulse amplifiers; Quantum dot lasers; Quantum well lasers; Stimulated emission; Tunable circuits and devices; III-V semiconductors; modelocking; optical gain measurement; quantum dot laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2010 12th International Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-7799-9

Electronic_ISBN

978-1-4244-7797-5

Type

conf

DOI

10.1109/ICTON.2010.5549095

Filename

5549095