Title :
100 000 Frames/s 64 × 32 Single-Photon Detector Array for 2-D Imaging and 3-D Ranging
Author :
Bronzi, Danilo ; Villa, Federica ; Tisa, Simone ; Tosi, Alberto ; Zappa, Franco ; Durini, Daniel ; Weyers, Sascha ; Brockherde, Werner
Author_Institution :
Dipt. di Elettron., Politec. di Milano, Milan, Italy
Abstract :
We report on the design and characterization of a multipurpose 64 × 32 CMOS single-photon avalanche diode (SPAD) array. The chip is fabricated in a high-voltage 0.35-μm CMOS technology and consists of 2048 pixels, each combining a very low noise (100 cps at 5-V excess bias) 30-μm SPAD, a prompt avalanche sensing circuit, and digital processing electronics. The array not only delivers two-dimensional intensity information through photon counting in either free-running (down to 10-μs integration time) or time-gated mode, but can also perform smart light demodulation with in-pixel background suppression. The latter feature enables phase-resolved imaging for extracting either three-dimensional depth-resolved images or decay lifetime maps, by measuring the phase shift between a modulated excitation light and the reflected photons. Pixel-level memories enable fully parallel processing and global-shutter readout, preventing motion artifacts (e.g., skew, wobble, motion blur) and partial exposure effects. The array is able to acquire very fast optical events at high frame-rate (up to 100 000 fps) and at single-photon level. Low-noise SPADs ensure high dynamic range (up to 110 dB at 100 fps) with peak photon detection efficiency of almost 50% at 410 nm. The SPAD imager provides different operating modes, thus, enabling both time-domain applications, like fluorescence lifetime imaging (FLIM) and fluorescence correlation spectroscopy, as well as frequency-domain FLIM and lock-in 3-D ranging for automotive vision and lidar.
Keywords :
CMOS image sensors; avalanche diodes; fluorescence; photodetectors; photon counting; 2-D imaging; 3-D ranging; avalanche sensing circuit; digital processing electronics; fluorescence correlation spectroscopy; fluorescence lifetime imaging; high-voltage CMOS technology; in-pixel background suppression; modulated excitation light; multipurpose CMOS single-photon avalanche diode array; phase shift; phase-resolved imaging; photon counting; pixel-level memories; reflected photons; single-photon detector array; size 0.35 mum; size 30 mum; smart light demodulation; time-domain applications; wavelength 410 nm; Arrays; CMOS integrated circuits; Fluorescence; Imaging; Photonics; Radiation detectors; Three-dimensional displays; 2-D imaging; 3-D ranging; CMOS imagers; FCS; FLIM; Photon Counting; SPAD; time-gated imaging;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2014.2341562