DocumentCode
1581787
Title
Snubbered high-power press-pack IGBT converter
Author
Bruckner, Thomas ; Sadowski, Piotr ; Jakob, Roland
Author_Institution
GE Global Res., Garching, Germany
fYear
2013
Firstpage
1
Lastpage
7
Abstract
A medium-voltage IGBT converter with turn-on snubber is presented. The drastic reduction of turn-on losses allows the inverter to reach a peak output power well beyond the 12-MVA mark. The paper discusses the design challenges for the new inverter and presents test results.
Keywords
insulated gate bipolar transistors; power bipolar transistors; power convertors; snubbers; apparent power 12 MVA; inverter; medium-voltage IGBT converter; snubbered high-power press-pack IGBT converter; turn-on losses reduction; turn-on snubber; Clamps; Inductance; Insulated gate bipolar transistors; Inverters; Logic gates; Snubbers; Transient analysis; IGBT; industrial applications; multilevel converters; variable-speed drives;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location
Lille
Type
conf
DOI
10.1109/EPE.2013.6634319
Filename
6634319
Link To Document