Title :
Press-pack IGBTs, semiconductor switches for pulse power
Author :
Wakeman, F. ; Findlay, W. ; Gangru Li
Author_Institution :
Westcode Semicond. Ltd., Chippenham, UK
Abstract :
A range of pressure contact IGBTs with voltage ratings of 1.8 kV and 5 kV are introduced as suitable switches for pulse power applications. The electromechanical characteristics of the pressure contact IGBTs are compared to substrate mounted devices and some significant differences, which may offer an advantage in some pulse power applications, are identified. Initial test results conducted on three devices of different ratings, under short pulse high di/dt conditions, are reported.
Keywords :
insulated gate bipolar transistors; power semiconductor switches; pulsed power switches; semiconductor device packaging; semiconductor device reliability; 1.8 kV; 5 kV; electromechanical characteristics; high reliability; mechanical design; press-pack IGBTs; pressure contact IGBTs; pulse power applications; short pulse high di/dt conditions; switching characteristics; Ceramics; Contacts; Equivalent circuits; Inductance; Insulated gate bipolar transistors; Packaging; Power semiconductor switches; Resistors; Substrates; Voltage;
Conference_Titel :
Pulsed Power Plasma Science, 2001. PPPS-2001. Digest of Technical Papers
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7120-8
DOI :
10.1109/PPPS.2001.1001724
