Title :
New termination architecture for 1700 V diamond Schottky diode
Author :
Arbess, Houssam ; Isoird, K. ; Hamady, Saleem
Author_Institution :
LAAS, Toulouse, France
Abstract :
New field plate architecture is applied to pseudo vertical diamond Schottky diode. Using several field plate architectures, a TCAD simulation is realized in order to reduce the electric field in the dielectric while maintaining high breakdown voltage. Firstly and after simple variations in the field plate architecture, the breakdown voltage was improved from 1632 V to 2141 V at 700 K. Concerning Emax in the dielectric, we obtained a decreasing of maximum electric field from 57 to 18 MV/cm.
Keywords :
Schottky diodes; diamond; power semiconductor diodes; technology CAD (electronics); TCAD simulation; field plate architecture; pseudovertical diamond Schottky diode; temperature 700 K; termination architecture; voltage 1632 V to 2141 V; Diamonds; Dielectrics; Doping; Electric fields; Electric potential; Schottky diodes; Semiconductor process modeling; Diamond; Field plate architecture; Schottky diode; TCAD simulation;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6634330
