DocumentCode
1582346
Title
The removal of phosphorus and boron by slag and acid leaching treatment
Author
He, Falin ; Chen, Chao
Author_Institution
College of Physics and Mechanics and Electrics, Xiamen University, 361005, China
fYear
2012
Firstpage
1
Lastpage
4
Abstract
The rapid development of photovoltaic industry is causing many researches on the refining of silicon, especially the purification of silicon by metallurgical method from the metallurgical-grade silicon (MG-Si). The removal of phosphorus and boron is one of the major problems on the refining of MG-Si to Solar-grade silicon (SoG-Si). At present, the removal method of phosphorous and boron by slagging of CaO-SiO2 -CaF2 and acid leaching treatment is being researched. It was found that the best removal ratio of phosphorous and boron could reach up to 81% and 92%. Meanwhile, the principle of removal of phosphorous and boron has been studied.
Keywords
acid leaching; boron; metallurgical-grade silicon; phosphorus; slagging;
fLanguage
English
Publisher
ieee
Conference_Titel
World Automation Congress (WAC), 2012
Conference_Location
Puerto Vallarta, Mexico
ISSN
2154-4824
Print_ISBN
978-1-4673-4497-5
Type
conf
Filename
6321365
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