• DocumentCode
    1582346
  • Title

    The removal of phosphorus and boron by slag and acid leaching treatment

  • Author

    He, Falin ; Chen, Chao

  • Author_Institution
    College of Physics and Mechanics and Electrics, Xiamen University, 361005, China
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The rapid development of photovoltaic industry is causing many researches on the refining of silicon, especially the purification of silicon by metallurgical method from the metallurgical-grade silicon (MG-Si). The removal of phosphorus and boron is one of the major problems on the refining of MG-Si to Solar-grade silicon (SoG-Si). At present, the removal method of phosphorous and boron by slagging of CaO-SiO2-CaF2 and acid leaching treatment is being researched. It was found that the best removal ratio of phosphorous and boron could reach up to 81% and 92%. Meanwhile, the principle of removal of phosphorous and boron has been studied.
  • Keywords
    acid leaching; boron; metallurgical-grade silicon; phosphorus; slagging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    World Automation Congress (WAC), 2012
  • Conference_Location
    Puerto Vallarta, Mexico
  • ISSN
    2154-4824
  • Print_ISBN
    978-1-4673-4497-5
  • Type

    conf

  • Filename
    6321365