DocumentCode
1582371
Title
On understanding switching and EMI performance of SiC power JFETs to design a 75 W high voltage flyback converter
Author
Basu, Sreetama ; Undeland, Tore M.
Author_Institution
BOSE Res. PVT. Ltd., Bangalore, India
fYear
2013
Firstpage
1
Lastpage
5
Abstract
Normally-off three-terminal SiC VJFETs having excellent low switching loss, high temperature and high voltage rating are commercially available. This paper compares the switching and EMI performance of SiC Power JFETs to a standard MOSFET on a 75 W high voltage flyback converter and highlights suitable design strategies needed for using a SiC Power JFET.
Keywords
MOSFET; electromagnetic interference; junction gate field effect transistors; power convertors; power semiconductor devices; silicon compounds; wide band gap semiconductors; EMI; MOSFET; SiC; electromagnetic interference; high voltage flyback converter; high voltage rating; low switching loss; power 75 W; power JFET; switching performance; three-terminal VJFET; Electromagnetic interference; JFETs; Junctions; Logic gates; MOSFET; Silicon carbide; Switches; Bipolar Junction Transistor (BJT); JFET; MOSFET; Silicon Carbide (SiC);
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location
Lille
Type
conf
DOI
10.1109/EPE.2013.6634342
Filename
6634342
Link To Document