Title :
IGBT design optimisation for solid-state circuit breaker applications
Author :
Supono, I. ; Castellazzi, Alberto ; Urresti, J. ; Flores, D.
Author_Institution :
Power Electron., Machines & Control Group, Univ. of Nottingham, Nottingham, UK
Abstract :
This paper will consider the use of IGBTs in solid state circuit breakers (SSCB). An optimisation process which produces a better structure of IGBT for use in this application is also presented. Advanced 2D device physical simulations show that the use of a charge storage structures is effective in maintaining the trade-off between important characteristics for SSCB. The optimised structure provides an IGBT with a better on-state performance, a maintained forward blocking capability, and a satisfactory switching performance.
Keywords :
circuit breakers; insulated gate bipolar transistors; IGBT design optimisation; IGBT structure; SSCB; advanced 2D device physical simulations; charge storage structures; forward blocking capability; optimisation process; satisfactory switching performance; solid-state circuit breaker applications; Circuit breakers; Doping; Insulated gate bipolar transistors; Integrated circuit modeling; Optimization; Performance evaluation; Switches; IGBT; device simulation;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6634345
