Design of 24 GHz SiGe HBT balanced power amplifier for system-on-a-chip ultra-wideband applications

Author

Kinayman, Noyan ; Jenkins, Alan ; Helms, David ; Gresham, Ian

Author_Institution

M/A-COM, A Tyco Electron. Co., Lowell, MA, USA

fYear

2005

Firstpage

91

Lastpage

94

Abstract

The design of a balanced, three-stage, common-emitter, 24 GHz SiGe HBT power amplifier for ultra-wideband applications is described. The unique features of the amplifier are very flat gain response in the frequency band of interest and sharp gain drop outside of the band, which are important considerations for a system-on-a-chip UWB application. The amplifier has 18 dB nominal gain in the frequency band of 24±2 GHz. The gain variation is ±0.5 dB in the same frequency band. Saturated output power is 12 dBm at 24 GHz.

Keywords

Ge-Si alloys; MMIC power amplifiers; bipolar MMIC; bipolar analogue integrated circuits; differential amplifiers; heterojunction bipolar transistors; integrated circuit design; microwave bipolar transistors; system-on-chip; ultra wideband technology; 17.5 to 18.5 dB; 22 to 26 GHz; HBT amplifier; HBT balanced power amplifier; SiGe; SoC UWB application; balanced amplifier; common-emitter amplifier; flat gain response; system-on-a-chip ultra-wideband applications; Dielectric substrates; Frequency; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Power amplifiers; Silicon germanium; System-on-a-chip; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8983-2

Type

conf

DOI

10.1109/RFIC.2005.1489595

Filename

1489595