Statistical variation of NMOSFET hot-carrier lifetime and its impact on digital circuit reliability

Author

Chen, Tone F. ; McGaughy, Bruce W. ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1995

Firstpage

29

Lastpage

32

Abstract

The statistical variation of NMOSFET hot-carrier lifetime is studied. The variation in lifetime among spatially separate dies is more significant than the variation within each die. Due to the statistical nature of device hot-carrier lifetime, hot-carrier induced circuit delay degradation in critical paths is a statistical distribution rather than a deterministic parameter. A statistical hot-carrier simulator has been developed to predict the impact that statistical variation of device hot-carrier lifetime has on circuit reliability

Keywords

MOS digital integrated circuits; MOSFET; carrier lifetime; delays; hot carriers; integrated circuit reliability; statistical analysis; NMOSFET; circuit delay degradation; circuit reliability; digital circuit reliability; hot-carrier lifetime; spatially separate dies; statistical variation; Charge carrier lifetime; Circuit simulation; Degradation; Delay; Digital circuits; Hot carriers; MOSFET circuits; Production; Semiconductor device modeling; Statistical distributions;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.497175

Filename

497175