LDD charge pumping-direct measurement of interface states in the overlap region

In submicron MOS devices, the degradation of the region where the gate overlaps the LDD (lightly doped drain) region determines hot carrier reliability as well as off-state leakage current. A quantitative experimental technique (LDD charge pumping) to characterize the interface states in the overlap region is demonstrated in this work. The usefulness of this technique is then demonstrated by application to the study of hot carrier and Fowler-Nordheim stresses as well as plasma exposure