Title :
Unified model of boron diffusion in thin gate oxides: effects of F, H2, N, oxide thickness and injected Si interstitials
Author :
Fair, Richard B.
Author_Institution :
Dept. of Electr. Eng., Duke Univ., Durham, NC, USA
Abstract :
This work is describes the first unified network-defect-level model for B diffusion in SiO2 for use in process simulation. Models have been developed to explain silicon processing effects on B diffusion through thin gate oxides. With these models we can predict the enhanced B diffusion effects in poly Si/SiO2 structures from BF2 implants, wet oxidation and exposure to H2 ambients, and the concentration of N in nitrided oxides in reducing B diffusion. We have also shown for the first time that there is an oxide thickness dependence on B diffusion
Keywords :
annealing; boron; diffusion; heat of formation; impurity-defect interactions; interstitials; ion implantation; molecular dynamics method; oxidation; semiconductor process modelling; silicon compounds; B diffusion; BF2 implants; H2; H2 ambient exposure; N concentration; Si processing effects; Si-SiO2:B; Si:BF2; SiON; annealing conditions; enhanced B diffusion effects; injected Si interstitials; molecular dynamics calculations; nitrided oxides; oxide thickness dependence; p-MOSFET; poly Si/SiO2 structures; process simulation; thin gate oxides; unified network-defect-level model; wet oxidation; Atomic measurements; Boron; Computational modeling; Computer networks; Couplings; Hydrogen; Implants; Impurities; Intelligent networks; Oxidation;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497188
