DocumentCode :
1583345
Title :
The 3rd dimension-More Life for Moore´s Law
Author :
Yu, C.H.
Author_Institution :
Div. of Adv. Module Technol., Taiwan Semicond. Manuf. Co., Hsin-Chu
fYear :
2006
Firstpage :
1
Lastpage :
6
Abstract :
In accordance with continuing push for smaller and faster electronics, there is strong demand for further miniaturization and higher performance of mobile and other digital devices. Three-dimensional interconnect with through silicon via is one of the solution with best potential to extend Moore´s Law. 3D interconnect had the benefits of lower cost, higher performance, smaller form factor and heterogeneous integration for chips manufacturing. Thermal dissipation, process technology and circuit design are the top three issues for 3D IC success. For Si processing, the major challenges are the patterning and the fill of the through wafer via, wafer thinning, die/wafer bonding and its alignment. We need to carefully address those issues before we can proceed to mass production
Keywords :
integrated circuit design; integrated circuit interconnections; integrated circuit manufacture; wafer bonding; 3D IC; 3D interconnect; Moore´s Law; chips manufacturing; circuit design; die-wafer bonding; heterogeneous integration; process technology; thermal dissipation; three-dimensional interconnect; wafer thinning; Electronics industry; Electrons; Integrated circuit interconnections; Manufacturing; Moore´s Law; Packaging; Semiconductor device manufacture; System-on-a-chip; Three-dimensional integrated circuits; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly Conference Taiwan, 2006. IMPACT 2006. International
Conference_Location :
Taipei
Print_ISBN :
1-4244-0734-6
Electronic_ISBN :
1-4244-0735-4
Type :
conf
DOI :
10.1109/IMPACT.2006.312181
Filename :
4107438
Link To Document :
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