• DocumentCode
    1583370
  • Title

    Next generation CMOS compact models for RF and microwave applications

  • Author

    Niknejad, Ali M. ; Doan, Chinh ; Emami, Sohrab ; Dunga, Mohan ; Xi, Xuemei ; He, Jin ; Brodersen, Robert ; Hu, Chenming

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • fYear
    2005
  • Firstpage
    141
  • Lastpage
    144
  • Abstract
    Commercial CMOS chips routinely operate at frequencies up to 5 GHz and exciting new opportunities exists in higher frequency bands such as 3-10 GHz, 17 GHz, 24 GHz, and 60 GHz. The Berkeley Wireless Research Center has demonstrated that standard 130 nm CMOS technology is capable of operation up to 60 GHz, enabling a host of new mm-wave applications such as Gb/s WLAN and compact radar imaging. Will circuit design and compact modeling continue along the same course, or is a new microwave design methodology required? This paper highlights the design and modeling challenges in moving up to these higher frequencies. A merger of RF and microwave design perspectives is used to offer insight into the problem. The paper discusses requirements for a next generation compact model to meet these challenges and offers potential solutions.
  • Keywords
    CMOS integrated circuits; field effect MIMIC; field effect MMIC; integrated circuit design; integrated circuit modelling; 130 nm; 17 GHz; 3 to 10 GHz; 60 GHz; CMOS compact models; RFIC; WLAN; compact radar imaging; microwave IC; mm-wave IC design; CMOS technology; Costs; Design methodology; Microwave devices; Microwave theory and techniques; Radio frequency; Radiofrequency amplifiers; Semiconductor device modeling; Silicon; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
  • ISSN
    1529-2517
  • Print_ISBN
    0-7803-8983-2
  • Type

    conf

  • DOI
    10.1109/RFIC.2005.1489612
  • Filename
    1489612