Title :
A sputter equipment simulation system including molecular dynamical target atom scattering model
Author :
Yamada, H. ; Shinmura, T. ; Ohta, T.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
We have developed an advanced sputter equipment simulation system to design the deposition equipment for ULSI with high aspect ratios contact holes. The system is composed of a newly developed target atom scattering model and die profile model with the Monte Carlo (MC) method. The target atom scattering model uses the Molecular Dynamics (MD) technique combined with thermal analysis and derives ejection angle distribution. The simulated results of titanium (Ti) bottom coverage vs. applied voltage agree with experiments within 10% accuracy
Keywords :
Monte Carlo methods; ULSI; integrated circuit interconnections; molecular dynamics method; semiconductor process modelling; sputter deposition; thermal analysis; titanium; Monte Carlo method; Ti; Ti bottom coverage; ULSI; contact hole filling; deposition equipment design; die profile model; ejection angle distribution; high aspect ratios contact holes; molecular dynamics technique; sputter equipment simulation system; surface orientation; target atom scattering model; thermal analysis; Argon; Atomic layer deposition; Boundary conditions; Maxwell equations; Plasma simulation; Plasma temperature; Scattering; Thermal conductivity; Trajectory; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497190
