Title :
Physical etching/deposition simulation with collision-free boundary movement
Author :
Hsiau, Z. ; Kan, E.C. ; McVittie, J.P. ; Dutton, R.W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
We demonstrate that accurate and robust physical simulation of etching and deposition in the semiconductor manufacturing technology can be achieved by using the collision-free boundary movement method. Constraints for preserving physical accuracy, treatment of multiple junctions, adaptive gridding by quad/oct-tree meshes and experimental corroboration of void and stringer formation in 2D and 3D structures will be presented
Keywords :
semiconductor process modelling; sputter etching; vapour deposition; 2D structures; 3D structures; adaptive gridding; collision-free boundary movement; deposition; etching; multiple junctions; oct-tree meshes; physical simulation; quad-tree meshes; semiconductor manufacturing technology; stringers; voids; Anisotropic magnetoresistance; Electric shock; Etching; Geometry; Merging; Plasma applications; Plasma simulation; Robustness; Solid modeling;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497192
