Title :
Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout
Author :
Kao, H.L. ; Chin, Albert ; Lai, J.M. ; Lee, C.F. ; Chiang, K.C. ; McAlister, S.P.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A novel microstrip line layout is developed to directly measure the minimum noise figure (NFmin) accurately instead of the complicated de-embedding procedure in the conventional CPW line. A very low NFmin of 1.05 dB at 10 GHz is directly measured in 16 gate finger 0.18 μm MOSFETs without any de-embedding. Based on the accurate NFmin measurement, we have developed a self-consistent DC, S-parameters, and NFmin model to predict device characteristics after the continuous stress, with good accuracy.
Keywords :
MOSFET; S-parameters; microstrip lines; microwave field effect transistors; semiconductor device measurement; semiconductor device models; semiconductor device noise; 0.18 micron; 1.05 dB; 10 GHz; RF MOSFET modeling; S-parameters; electrical stress; low-noise microstrip line layout; minimum noise figure measurement; multiple gate finger MOSFET; Coplanar waveguides; Fingers; MOSFETs; Microstrip; Noise figure; Noise measurement; Predictive models; Radio frequency; Scattering parameters; Stress measurement;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489616
