Title :
Ta2O5 capacitors´ dielectric material for giga-bit DRAMs
Author :
Ohji, Y. ; Matsui, Y. ; Itoga, T. ; Hirayama, M. ; Sugawara, Y. ; Torii, K. ; Miki, H. ; Nakata, M. ; Asano, I. ; Iijima, S. ; Kawamoto, Y.
Author_Institution :
Semicond. Integrated Circuits Div., Hitachi Ltd., Tokyo, Japan
Abstract :
We fabricated 256-Mbit DRAM cells using a 0.5 μm high CROWN capacitor with crystallized Ta2O5 dielectric film. We confirmed that the crystallized Ta2O5 (3.3 nm of SiO2-equivalent thickness) was very stable in the conventional metallization process. The key issues for manufacturing were to eliminate the hydrocarbon contaminants during high temperature O 2 annealing. Our preliminary investigation of Ta2O 5 metal-insulator-metal (MIM) capacitors suggested that it is possible to fabricate 1-Gbit DRAM cells using the amorphous Ta2 O5 MIM capacitor with a CROWN structure
Keywords :
DRAM chips; MIM devices; annealing; capacitors; dielectric thin films; integrated circuit technology; tantalum compounds; 1 Gbit; 256 Mbit; CROWN capacitor; DRAM cell; MIM capacitor; Ta2O5; amorphous Ta2O5; crystallized Ta2O5; dielectric film; high temperature O2 annealing; hydrocarbon contaminants; manufacturing; metallization; Annealing; Crystallization; Dielectric films; Hydrocarbons; MIM capacitors; Manufacturing; Metal-insulator structures; Metallization; Random access memory; Temperature;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497194
