Title :
Novel stacked capacitor technology for 1 Gbit DRAMs with CVD-(Ba,Sr)TiO3 thin films on a thick storage node of Ru
Author :
Yuuki, A. ; Yamamuka, M. ; Makita, T. ; Horikawa, T. ; Shibano, T. ; Hirano, N. ; Maeda, H. ; Mikami, N. ; Ono, K. ; Ogata, H. ; Abe, H.
Author_Institution :
Semicond. Res. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Simple stacked cell capacitors for 1 Gbit DRAMs have been constructed with a thick storage node of ruthenium (Ru) and high dielectric constant CVD-(Ba,Sr)TiO3 films of equivalent oxide thickness teq=0.50 nm with an excellent step coverage. A storage capacitance of 30 fF/cell was shown to be realized for storage nodes 0.24 μm wide, 0.60 μm deep, and 0.20 μm high, with a charge loss below 19% of the initial stored charge during a pause-refresh time of 10 s in 1 Gbit DRAMs
Keywords :
CVD coatings; DRAM chips; barium compounds; capacitors; dielectric thin films; integrated circuit technology; ruthenium; strontium compounds; 1 Gbit; BaSrTiO3; CVD-(Ba,Sr)TiO3 thin films; DRAMs; Ru; charge loss; dielectric constant; equivalent oxide thickness; pause-refresh time; ruthenium; stacked cell capacitors; step coverage; storage capacitance; thick storage node; Binary search trees; Capacitance; Capacitors; Dielectric thin films; Electrodes; Laboratories; Material storage; Random access memory; Temperature; Transistors;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497195
