• DocumentCode
    1583645
  • Title

    Characteristics of the PZT thin film device fabricated on the single grain

  • Author

    Joo, Jae-Hyun ; Joo, Seung-Ki

  • Author_Institution
    Dept. of Metall. Eng., Seoul Nat. Univ., South Korea
  • fYear
    1995
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    It was found that when tantalum was added to PZT (PbZrxTi1-xO3), the grain size of the sputter-deposited PZT films could be significantly enlarged so that abnormally large single grains could be obtained through so called SRCC (Selective Radiation Controlled Crystallization) process. Electrical measurements of the single grained PZT thin films strongly indicated that the current problems with the polycrystalline PZT thin films such as high leakage current, low breakdown field, fatigue and aging can be solved. The single grained PZT films showed low leakage current (JLC~1×10-8 A/cm2) and excellent polarization properties (Qc~35 μC/cm2, Pr~15 μC/cm2)
  • Keywords
    ferroelectric thin films; grain size; lead compounds; piezoceramics; sputtered coatings; PZT thin film device; PZT:Ta; PbZrO3TiO3:Ta; SRCC; aging; breakdown field; electrical measurements; fatigue; grain size; leakage current; polarization; selective radiation controlled crystallization; single grain; sputter deposition; tantalum doping; Crystallization; Current measurement; Electric breakdown; Electric variables measurement; Grain size; Leakage current; Process control; Size control; Sputtering; Thin film devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.497198
  • Filename
    497198