Title :
Characteristics of the PZT thin film device fabricated on the single grain
Author :
Joo, Jae-Hyun ; Joo, Seung-Ki
Author_Institution :
Dept. of Metall. Eng., Seoul Nat. Univ., South Korea
Abstract :
It was found that when tantalum was added to PZT (PbZrxTi1-xO3), the grain size of the sputter-deposited PZT films could be significantly enlarged so that abnormally large single grains could be obtained through so called SRCC (Selective Radiation Controlled Crystallization) process. Electrical measurements of the single grained PZT thin films strongly indicated that the current problems with the polycrystalline PZT thin films such as high leakage current, low breakdown field, fatigue and aging can be solved. The single grained PZT films showed low leakage current (JLC~1×10-8 A/cm2) and excellent polarization properties (Qc~35 μC/cm2, Pr~15 μC/cm2)
Keywords :
ferroelectric thin films; grain size; lead compounds; piezoceramics; sputtered coatings; PZT thin film device; PZT:Ta; PbZrO3TiO3:Ta; SRCC; aging; breakdown field; electrical measurements; fatigue; grain size; leakage current; polarization; selective radiation controlled crystallization; single grain; sputter deposition; tantalum doping; Crystallization; Current measurement; Electric breakdown; Electric variables measurement; Grain size; Leakage current; Process control; Size control; Sputtering; Thin film devices;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497198
