DocumentCode
1583656
Title
Online Vce measurement method for wear-out monitoring of high power IGBT modules
Author
Beczkowski, Szymon ; Ghimre, Pramod ; de Vega, Angel Ruiz ; Munk-Nielsen, Stig ; Rannestad, Bjorn ; Thogersen, Paul
Author_Institution
Aalborg Univ., Aalborg, Denmark
fYear
2013
Firstpage
1
Lastpage
7
Abstract
A simple Vce online monitoring circuit is presented in this paper. It allows an accurate wear out prediction of IGBT modules, in high-power applications, during normal converter operation. Bipolar measurement allows monitoring of both IGBT and antiparallel diode. The circuit uses two serial connected diodes to sense the Vce voltage with millivolt accuracy. One diode acts as a protection to block high DC voltage present on input terminals. When the device is conducting the voltage on the second diode is measured to compensate for the voltage drop on the protection diode thus eliminating voltage offset due to diodes´ forward voltage temperature dependency. Using four diodes one can monitor voltages on all power devices in a converter leg.
Keywords
insulated gate bipolar transistors; power bipolar transistors; power semiconductor diodes; voltage measurement; DC voltage; IGBT monitoring; antiparallel diode monitoring; bipolar measurement; collector-emitter voltage online monitoring circuit; converter leg; diode forward voltage temperature dependency; high-power IGBT modules; millivolt accuracy; online collector-emitter voltage measurement method; serial-connected diodes; voltage drop compensation; voltage offset elimination; wear out prediction; wear-out monitoring; Current measurement; Insulated gate bipolar transistors; Schottky diodes; Sea measurements; Temperature measurement; Voltage measurement; Wires; IGBT; Measurement; ageing; diode; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location
Lille
Type
conf
DOI
10.1109/EPE.2013.6634390
Filename
6634390
Link To Document