Title :
1.5 V-operation GaAs spike-gate power FET with 65% power-added efficiency
Author :
Tanaka, Tsuyoshi ; Furukawa, Hidetoshi ; Takenaka, Hiroshi ; Ueda, Tetsuzo ; Noma, Atsushi ; Fukui, Takeshi ; Tateoka, Kazuki ; Ueda, Daisuke
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
A GaAs power FET with a spike-gate has been developed for the high efficiency operation under the extremely low voltage supply of 1.5 V. The spike-gate provides both the low on-resistance of 2.2 Ω/mm and the high transconductance of 180 mS/mm without reducing the output impedance nor increasing the gate resistance. The implemented device achieved the output power of 31.5 dBm with 65% power-added efficiency at the frequency of 900 MHz. Sub-quarter micron footprints of the spike-gate were defined by using the phase shift lithography
Keywords :
III-V semiconductors; UHF field effect transistors; doping profiles; gallium arsenide; power field effect transistors; 1.5 V; 180 mS/mm; 65 percent; 900 MHz; GaAs; delta doping; low voltage supply; phase shift lithography; spike-gate power FET; sub-quarter micron footprints; FETs; Gallium arsenide; HEMTs; Knee; Lithography; Low voltage; MODFETs; Power generation; Resists; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497209
