Ultra-high-speed InAlAs/InGaAs HEMT ICs using pn-level-shift diodes

Author

Enoki, Takatomo ; Umeda, Yohtaro ; Osafune, Kazuo ; Ito, Hiroshi ; Ishii, Yasunobu

Author_Institution

NTT LSI Labs., Kanagawa, Japan

fYear

1995

Firstpage

193

Lastpage

196

Abstract

Forty-GHz operation of SCFL static binary frequency dividers is demonstrated by monolithically integrating 0.1-μm-gate InAlAs/InGaAs HEMTs and p-n diodes for the first time. The HEMT has an InP-recess-etch stopper in the InAlAs barrier and the standard deviation of the threshold voltage in a 2-inch wafer is reduced to 44 mV. The p-n diode is used as a level-shift diode because of its smaller size and lower resistance than those of conventional diodes using a Schottky gate of the HEMT. The reduced resistance and size result in shorter CR-time delays of the diodes and transmission delays of the interconnection. Thus, it is possible to make the most of high-speed performance of the HEMTs in the circuits by employing p-n diodes as level-shift diodes

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect logic circuits; frequency dividers; gallium arsenide; indium compounds; semiconductor diodes; very high speed integrated circuits; 0.1 micron; 40 GHz; HEMT ICs; InAlAs-InGaAs; InP; InP-recess-etch stopper; SCFL; high-speed performance; p-n level-shift diodes; source-coupled FET logic; static binary frequency dividers; ultra-high-speed ICs; Delay; FETs; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Integrated circuit interconnections; Schottky diodes; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.497212

Filename

497212