Nanoindentation-induced Phase Transformation of Silicon

Author

Yang, Ping-Feng ; Jian, Sheng-Rui ; Lai, Yi-Shao ; Chen, Tsan-Hsien ; Chen, Rong-Sheng

Author_Institution

Lab. of Stress-Reliability, Adv. Semicond. Eng., Inc., Kaohsiung

fYear

2006

Firstpage

1

Lastpage

4

Abstract

In this study, the deformation behavior of single-crystal Si (100) was examined using nanoindentation, followed by analysis using cross-sectional transmission electron microscopy (XTEM), scanning electron microscopy (SEM), and Raman microspectroscopy. XTEM samples were prepared by focused ion beam (FIB) milling to accurately position the cross-section through the indentations. The deformation via phase transformation was clearly observed with micro-Raman and XTEM, showing the presence of high-pressure crystalline phases Si-III and Si-XII following pressure release. The indentation fracture toughness of Si is also discussed

Keywords

Raman spectra; deformation; elemental semiconductors; fracture toughness; high-pressure solid-state phase transformations; indentation; nanotechnology; scanning electron microscopy; silicon; transmission electron microscopy; Raman microspectroscopy; SEM; Si; XTEM; cross-sectional transmission electron microscopy; focused ion beam milling; high-pressure crystalline phases; indentation fracture toughness; nanoindentation-induced phase transformation; scanning electron microscopy; silicon; single-crystal Si; Crystallization; Electromechanical systems; Ion beams; Mechanical factors; Milling; Scanning electron microscopy; Semiconductor materials; Silicon on insulator technology; Testing; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Microsystems, Packaging, Assembly Conference Taiwan, 2006. IMPACT 2006. International

Conference_Location

Taipei

Print_ISBN

1-4244-0735-4

Electronic_ISBN

1-4244-0735-4

Type

conf

DOI

10.1109/IMPACT.2006.312204

Filename

4107461