Title :
Nanoindentation-induced Phase Transformation of Silicon
Author :
Yang, Ping-Feng ; Jian, Sheng-Rui ; Lai, Yi-Shao ; Chen, Tsan-Hsien ; Chen, Rong-Sheng
Author_Institution :
Lab. of Stress-Reliability, Adv. Semicond. Eng., Inc., Kaohsiung
Abstract :
In this study, the deformation behavior of single-crystal Si (100) was examined using nanoindentation, followed by analysis using cross-sectional transmission electron microscopy (XTEM), scanning electron microscopy (SEM), and Raman microspectroscopy. XTEM samples were prepared by focused ion beam (FIB) milling to accurately position the cross-section through the indentations. The deformation via phase transformation was clearly observed with micro-Raman and XTEM, showing the presence of high-pressure crystalline phases Si-III and Si-XII following pressure release. The indentation fracture toughness of Si is also discussed
Keywords :
Raman spectra; deformation; elemental semiconductors; fracture toughness; high-pressure solid-state phase transformations; indentation; nanotechnology; scanning electron microscopy; silicon; transmission electron microscopy; Raman microspectroscopy; SEM; Si; XTEM; cross-sectional transmission electron microscopy; focused ion beam milling; high-pressure crystalline phases; indentation fracture toughness; nanoindentation-induced phase transformation; scanning electron microscopy; silicon; single-crystal Si; Crystallization; Electromechanical systems; Ion beams; Mechanical factors; Milling; Scanning electron microscopy; Semiconductor materials; Silicon on insulator technology; Testing; Transmission electron microscopy;
Conference_Titel :
Microsystems, Packaging, Assembly Conference Taiwan, 2006. IMPACT 2006. International
Conference_Location :
Taipei
Print_ISBN :
1-4244-0735-4
Electronic_ISBN :
1-4244-0735-4
DOI :
10.1109/IMPACT.2006.312204
