Title :
High-transconductance GaN MODFETs
Author :
Aktas, ö ; Kim, W. ; Fan, Z. ; Stengel, F. ; Botchkarev, A. ; Salvador, A. ; Sverdlov, B. ; Mohammad, S.N. ; Morkoç, H.
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
Current-voltage (I-V) characteristics of both normally-on and normally-off AlGaN-GaN MODFETs have been presented. The sheet carrier concentration of GaN used for the fabrication of these devices is significantly high. Both normally-on and normally-off devices exhibit high transconductance gm. For normally-on devices with 4 μm gate length, gm=72 mS/mm at T=300 K; for normally-off devices with 3 μ gate length gm=120 mS/mm at T=300 K. The devices were observed to operate at high temperatures up to T=300°C
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium compounds; high electron mobility transistors; 120 mS/mm; 3 micron; 300 C; 4 micron; 72 mS/mm; AlGaN-GaN; HEMT; I-V characteristics; MODFET; high temperature operation; high-transconductance devices; sheet carrier concentration; Electron mobility; Fabrication; Gallium nitride; HEMTs; Laboratories; MODFETs; Photonic band gap; Temperature; Transconductance; Voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.497215
