Title :
Light extraction from light-emitting diodes: effect of die geometries
Author :
Tran, Nguyen T. ; Shi, Frank G.
Author_Institution :
Lab. of Optoelectron. Packaging Mater., California Univ., Irvine, CA
Abstract :
Comparison study is performed for the first time for the light extraction efficiency (LEE) of GaN-based LED of four different basic geometries (square, circular or cylindrical, pentagonal and hexagonal cubic structures) with and without texturing die top surface by employing ray tracing simulation technique. It is found that the chip with highly negative deformed angles (HNDA-chips) has the highest LEE among all studied chip structures. For the HNDA chips, the circular-base chips have the highest LEE, i.e., significantly higher than that of square-, pentagonal- and hexagonal-base cubic chips. The industry often used surface texturing only improves the LEE over the conventional LED structure. The LEE of GaN chips with the textured surface is found to be always smaller than that of the HNDA-chips with un-textured surfaces
Keywords :
III-V semiconductors; Monte Carlo methods; gallium compounds; light emitting diodes; ray tracing; wide band gap semiconductors; GaN; HNDA chips; circular structures; cylindrical structures; die geometries; hexagonal cubic structures; highly negative deformed angles; light extraction efficiency; light-emitting diodes; pentagonal structures; ray tracing simulation technique; square structures; Absorption; Electrodes; Gallium nitride; Geometry; Light emitting diodes; Packaging; Ray tracing; Refractive index; Substrates; Surface texture; LED; light emitting diodes; light extraction;
Conference_Titel :
Microsystems, Packaging, Assembly Conference Taiwan, 2006. IMPACT 2006. International
Conference_Location :
Taipei
Print_ISBN :
1-4244-0735-4
Electronic_ISBN :
1-4244-0735-4
DOI :
10.1109/IMPACT.2006.312209
