Title :
A Hybrid Modeling Technique for Circuit-Level Simulation of InGaAs, SiGe, and ZnSe-Ge HBTs in RFIC and MPIC Systems
Author :
Tseng, Hsien-cheng ; Chou, Jung-Hua
Author_Institution :
Dept. of Electron. Eng., Kun Shan Univ., Tainan
Abstract :
A hybrid modeling technique has been developed for circuit-level simulation of advanced InGaAs, SiGe, and ZnSe-Ge HBTs in RFIC as well as OEIC systems. This intelligent approach distinguishes from prior ones in reinforcing the genetic algorithm (GA) with generalized analytical formulae (GAF) to efficiently extract physically-meaningful circuit elements used in the SPICE-like simulator. An in-depth analysis of optimized and measured S-parameters from the HBTs with higher level of packaging density clearly identifies the accuracy of the proposed methodology
Keywords :
Ge-Si alloys; II-VI semiconductors; III-V semiconductors; S-parameters; bipolar integrated circuits; elemental semiconductors; gallium arsenide; genetic algorithms; germanium; heterojunction bipolar transistors; indium compounds; integrated circuit modelling; integrated circuit packaging; integrated optoelectronics; radiofrequency integrated circuits; wide band gap semiconductors; zinc compounds; HBT; InGaAs; MPIC systems; OEIC systems; RFIC; S-parameters; SPICE-like simulator; SiGe; ZnSe-Ge; circuit-level simulation; generalized analytical formulae; genetic algorithm; hybrid modeling technique; intelligent approach; packaging density; Algorithm design and analysis; Analytical models; Circuit simulation; Genetic algorithms; Germanium silicon alloys; Hybrid intelligent systems; Indium gallium arsenide; Optoelectronic devices; Radiofrequency integrated circuits; Silicon germanium;
Conference_Titel :
Microsystems, Packaging, Assembly Conference Taiwan, 2006. IMPACT 2006. International
Conference_Location :
Taipei
Print_ISBN :
1-4244-0735-4
Electronic_ISBN :
1-4244-0735-4
DOI :
10.1109/IMPACT.2006.312213
