Title :
Basic strain physics
Author :
Chang, S.T. ; Liu, C.W.
Author_Institution :
Dept. of E.E., National Chung Hsing University, Taichung, Taiwan
Abstract :
•The basic strain physics behind the CMOS device is explained and future cases of technological importance to the industry are introduced. •Strain Engineering offers very large improvements in nanoscale MOSFETs and is scalable to the end of the Si CMOS roadmap. •Strain combined with new channel material such as Ge has a bright future and can enhance CMOS technology.
Keywords :
Annealing; CMOS process; CMOS technology; Capacitive sensors; Germanium silicon alloys; Metrology; Physics; Semiconductor lasers; Silicon germanium; Thin film transistors;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2008. RTP 2008. 16th IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
978-1-4244-1950-0
Electronic_ISBN :
978-1-4244-1951-7
DOI :
10.1109/RTP.2008.4690530
