• DocumentCode
    1584310
  • Title

    Basic strain physics

  • Author

    Chang, S.T. ; Liu, C.W.

  • Author_Institution
    Dept. of E.E., National Chung Hsing University, Taichung, Taiwan
  • fYear
    2008
  • Abstract
    •The basic strain physics behind the CMOS device is explained and future cases of technological importance to the industry are introduced. •Strain Engineering offers very large improvements in nanoscale MOSFETs and is scalable to the end of the Si CMOS roadmap. •Strain combined with new channel material such as Ge has a bright future and can enhance CMOS technology.
  • Keywords
    Annealing; CMOS process; CMOS technology; Capacitive sensors; Germanium silicon alloys; Metrology; Physics; Semiconductor lasers; Silicon germanium; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Thermal Processing of Semiconductors, 2008. RTP 2008. 16th IEEE International Conference on
  • Conference_Location
    Las Vegas, NV, USA
  • Print_ISBN
    978-1-4244-1950-0
  • Electronic_ISBN
    978-1-4244-1951-7
  • Type

    conf

  • DOI
    10.1109/RTP.2008.4690530
  • Filename
    4690530
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1584310